The preparation technology and thermal treatment PT thin film used in infrareddetector and photo-electron devices are studied. The er thin film prepared by multi-ion-beam reac-tive co-sputtering apparams are analysised by x-ray , XPS and EPMA. The impurity of PbO,Pb2Ti2O6 in PT thin film is eleminated and PbTiO3 (001)preferred orientation is improved. The rea-sonable teperature of substrates is given in this paper.