The paper studies a self- scanned circuit used in MOS image sensor with the demand of developing of high -order.low power disspation MOS image sensor and puts forward a kind of self -scanned circuit .which uses a three tramister dynamic nocomparing circuit whith a changing capacitor bootstrap circuit as MOS image sensor. The circuit adopted a silicon gote P -MOS technique, which is a high -speed low-dissipation dynamic no-coparing circuit. It is a practical unit circuit in the high -order array and solves the problem that the power dissipation of array rises with the increase of the array bite.