Analysis of the Damage Electric Field Strengths for Several Ultraviolet Thin Film Materials
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Abstract:
The laser induce damage threshold electric field instensity strengths of different materials used in the ultraviolet region, have been calculated by the model of multiphoton absorption ionization, avalanche model and a combination of the two. Avalanche model can not be used in the ultraviolet region, the result of the combination model can be used as reference. The authors analyze the relations between the laser induce damage electric field strengths to optical thin film and laser frequency, pulse duration. The relations between materials band gap and damage threshold electric field strengths is analyzed.
