The active neutral point clamped (ANPC) three-level topology with hybrid SiC and Si power module is widely used in photovoltaic and energy storage systems due to its high efficiency. However, in conventional hybrid SiC/Si power modules, the use of Si devices constrains efficiency improvements, while the introduction of SiC devices can lead to challenges such as uneven heat distribution, voltage overshoot, and oscillation. To address these issues, this paper proposes a comprehensive design method that incorporates both loss equalization of power devices and parasitic inductance optimization of the module layout to improve the performance of hybrid SiC/Si ANPC modules. First, a loss model of the power module is established, and thermal performance is optimized to reduce junction temperatures and chip-to-chip temperature differences. Second, a parasitic inductance model is constructed, and inductance is minimized through optimized layout design. Finally, a hybrid SiC/Si power module based on the ANPC topology is developed and experimentally evaluated. The results demonstrate significant improvements in terms of power loss, parasitic inductance, and thermal distribution, verifying the effectiveness of the proposed electro-thermal optimization design.