Silicon carbide (SiC) is a wide bandgap semiconductor with a critical breakdown electric field approximately an order of magnitude higher than that of silicon. This enables SiC-based MOSFETs to extend their voltage and current ratings to cover those of silicon-based IGBTs. Unipolar MOSFETs have a significant advantage over bipolar IGBTs in terms of switching losses. However, the silicon carbide MOSFET has a dynamic threshold drift problem, which is one of the key factors leading to the Tesla electric vehicle recall. This paper reviews recent research on the dynamic threshold voltage drift of SiC MOSFETs from both domestic and international sources. The drift behavior of SiC MOSFETs under different stresses and the physical mechanisms inducing dynamic threshold voltage drift are analyzed, and corresponding solutions are proposed.