甲酸处理的纳米铜无压烧结性能及高温老化研究
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作者单位:

1.重庆大学 电气工程学院 输配电装备及系统安全与新技术国家重点实验室;2.重庆大学 光电工程学院 光电技术与系统重点实验室;3.重庆大学

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TM223???????

基金项目:

国家自然科学基金项目(面上项目,重点项目,重大项目)


Research on pressureless sintering performance and high temperature aging of formic acid-treated nano-copper
Author:
Affiliation:

1.Education Ministry of China and State Key Laboratory of Power Transmission Equipment System Security and New Technology,Chongqing University;2.Key Laboratory of Optoelectronic Technology Systems,School of Optoelectronic Engineering,Chongqing University;3.Chongqing University

Fund Project:

the National Natural Science Foundation of China

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    摘要:

    本文介绍了一种基于甲酸铜高温分解反应的纳米铜无压烧结工艺,旨在解决现有铜烧结技术中铜易氧化且需要辅助压力的问题。通过甲酸溶液对纳米铜颗粒(Cu NPs)进行预处理,生成致密的甲酸铜膜,经烧结后最终形成Cu-Cu接头。经过接头烧结质量试验证明,甲酸反应时间为10 min,PEG溶剂,0.048 mm砂纸打磨基材表面以及5 ℃/min的升温速率为最优烧结条件。在该条件下,实现了纳米铜无压烧结,其制备的接头剪切强度可达16.18 MPa,电阻率低至5.7×10-6 Ω/cm。经过200小时高温老化实验,接头的剪切强度仍可达到9.38 MPa,验证了该烧结工艺的可靠性。本文所提出的工艺为实现第三代半导体芯片的可靠互联提供了新思路。

    Abstract:

    In this paper, a pressureless sintering process of copper nanoparticles based on the copper formate pyrolysis reaction is presented, aiming to solve the problems of the existing copper sintering technology in which copper is prone to oxidation and requires auxiliary pressure. Copper nanoparticles (Cu NPs) were pretreated by formic acid solution to generate dense copper formate films, which were finally formed into Cu-Cu joints after sintering. After the joint sintering quality test, it was proved that a formic acid reaction time of 10 min, PEG solvent, 0.048 mm sandpaper polishing of the substrate surface and a heating rate of 5 ℃/min were the optimal sintering conditions. Under these conditions, pressureless sintering of copper nanoparticles was achieved, and the shear strength of the prepared joints could reach 16.18 MPa with a low resistivity of 5.7×10-6 Ω/cm. After 200 hours of high-temperature aging test, the shear strength of the joints could still reach 9.38 MPa, which verified the reliability of the sintering process. Therefore, the process proposed in this paper provides a new idea for realizing reliable interconnections of third-generation semiconductor chips.

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  • 收稿日期:2022-10-13
  • 最后修改日期:2023-03-13
  • 录用日期:2023-03-13
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