多芯片绝缘栅极双极型晶体管(insulated gate bipolar transistor, IGBT)模块被广泛应用于大功率变换器中,对其进行状态监测是一种可以有效提高电力设备可靠性的方法。本文提出了一种基于开通延时变化的多芯片IGBT模块部分芯片故障检测方法,文中首先分析了芯片失效对开通过程的影响,指出了芯片失效与开通延时的关系。然后,基于开通延时与失效芯片数的映射关系提出了对应的故障监测方法,并通过实验验证了方法的有效性。实验结果表明该方法可用于多芯片模块的健康状态监测,对提高变流器的运行可靠性具有重要意义。

The multi-chip insulated gate bipolar transistor (IGBT) module is widely used in high power converters. Condition monitoring is an effective method to improve the reliability of power equipment. This paper proposes a partial chip fault detection method for multi-chip IGBT modules based on the change in turn-on delay of IGBT. Firstly, the in-fluence of chip failure on the turn-on process is analyzed, and the relationship between chip failure and turn-on delay is pointed out. Then, a fault monitoring method is proposed based on this relationship between turn-on delay and number of failed chips, and the effectiveness of the method is verified by experiments. The experimental results show this method has important significance for improving the operating reliability of the converter.

TM46

国家自然科学基金资助项目(5200070692)；高等学校学科创新引智计划(111计划)资助项目(B08036)。