提出了一种基于极点和残差的GaN-HEMT小信号等效电路的建模方法。首先基于矢量拟合算法合理拟合器件整个宽带测量Y参数，建立了基于有理函数形式的GaN-HEMT准确小信号模型的极点和残差;然后根据不同的残差性质分类讨论了实现此残差的等效电路模型;最后利用极点和残差建立了2、3阶小信号等效电路模型，ADS软件仿真验证该模型具有更高的精确性，结果表明该模型S参数的平均相对误差低于1%，远远低于传统模型。有效解决了传统小信号等效电路模型在高频下误差较大的问题。所提出的小信号电路模型在本质上属于数学拟合模型的研究方法，具有高度鲁棒性，可应用于其他类似晶体管提高实用性。

A modeling method of GaN-HEMT small signal equivalent circuit based on poles and residuals is proposed. Firstly, the poles and residuals of the accurate GaN-HEMT small signal model based on rational function are established by using vector fitting algorithm to reasonably fit the whole wideband measurement Y parameter of the device. Then, according to the different residual properties, the equivalent circuit model to realize the residual is discussed. Finally, a second - and third-order small-signal equivalent circuit model is established using poles and residuals. ADS software simulation verifies that the model has higher accuracy. The results show that the average relative error of S-parameters of the model is less than 1%, which is much lower than the traditional model. The problem of large error of traditional small-signal equivalent circuit model at high frequency is solved effectively. The proposed small-signal circuit model belongs to the research method of mathematical fitting model in essence, which is highly robust and can be applied to other similar transistors to improve practicability.

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国家自然科学基金项目（69901003）