The threshold voltage drift of silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) significantly affects their reliability in applications. In response to this issue, the article summarizes the characteristics of threshold voltage drift in silicon carbide MOSFETs and existing theoretical models. On this basis, it proposes a driving method and circuit to suppress threshold voltage drift. The circuit distinguishes the controlled device's turn-off dynamic process from the gate voltage after turn-off, aiming to reduce the threshold voltage drift in silicon carbide MOSFETs by introducing an intermediate voltage level. Additionally, it preserves the advantage of negative gate turn-off voltage. An experimental platform was constructed to validate this driving circuit's effectiveness in suppressing threshold voltage drift in silicon carbide MOSFETs. Results indicate that under the experimental conditions described in the article, this driving circuit reduces threshold voltage drift by 37% compared to traditional driving methods.