碳化硅金属-氧化物-半导体场效应晶体管（metal-oxide-semiconductor field-effect transistor，MOSFET）的阈值电压漂移严重影响了其在应用中的可靠性。针对该问题，文中总结了碳化硅MOSFET阈值电压漂移的特点与现有的理论模型，并以此为基础提出抑制阈值电压漂移的驱动方法与驱动电路。该驱动电路通过引入中间电平的方式，将被控器件关断动态过程与关断稳态后的栅极电压区分开来，以此来达到降低碳化硅MOSFET的阈值电压漂移量的目的，同时还可以保留负栅极关断电压的优势。搭建了实验平台来验证该驱动电路对碳化硅MOSFET阈值电压漂移的抑制效果，结果表明，在文中的实验条件下该驱动电路相比于传统的驱动方式阈值电压漂移量降低了37%。

The threshold voltage drift of silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) significantly affects their reliability in applications. In response to this issue, the article summarizes the characteristics of threshold voltage drift in silicon carbide MOSFETs and existing theoretical models. On this basis, it proposes a driving method and circuit to suppress threshold voltage drift. The circuit distinguishes the controlled device's turn-off dynamic process from the gate voltage after turn-off, aiming to reduce the threshold voltage drift in silicon carbide MOSFETs by introducing an intermediate voltage level. Additionally, it preserves the advantage of negative gate turn-off voltage. An experimental platform was constructed to validate this driving circuit's effectiveness in suppressing threshold voltage drift in silicon carbide MOSFETs. Results indicate that under the experimental conditions described in the article, this driving circuit reduces threshold voltage drift by 37% compared to traditional driving methods.

TN 386