Hybrid switch (HyS) is a new type of module with parallel applications of power semiconductor devices of different materials, structures and characteristics, which owns disruptive advantages at power loss and economy with coming of the third semiconductor devices in the new era of clean energy. For higher frequency applications of hybrid switch, based on circuit behavior analysis and semiconductor devices characteristics, this paper proposed the equivalent models of the fast turn-off process of high frequency hybrid switch with inner loop inductance considered, where relevant influence mechanisms were deeply explored. LTspice simulations were applied to demonstrate the intuitive impacts on the turn-off characteristics of hybrid switch by inner loop inductance. And the according high-precision double-pulse test (DPT) platform was designed and built to test the turn-off process of different combinations of hybrid switch with a range of inner loop inductance level, where the experiment results sufficiently verify the validity of mechanism analysis and the proposed models. This work also provides theoretical basis and practical reference for future designs of high frequency hybrid switch.