Influence of threshold drift on short circuit characteristics of silicon carbide MOSFET
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Affiliation:
1.State Key Laboratory of Power Transmission Equipment Technology,Chongqing University;2.Chongqing Tsingshan Industrial Company Limited
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摘要:
碳化硅金属-氧化物-半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)短路坚固性备受各界关注。碳化硅MOSFET动态阈值漂移问题可能会引起其短路能力的变化。针对该问题搭建了碳化硅MOSFET短路测试平台,研究不同阈值电压差异下,碳化硅MOSFET I类短路的变化情况。文中对该测试电路的工作原理以及短路测试结果进行了详细分析。实验结果表明,阈值电压越大,碳化硅MOSFET导通电阻越大,从而导致碳化硅MOSFET短路电流越大,短路能量越大。
Abstract:
The short-circuit durability of metal oxide semiconductor field-effect transistors (MOSFETs) has attracted much attention from various fields. The dynamic threshold drift problem of silicon carbide MOSFETs may cause changes in their short-circuit capability. A silicon carbide MOSFET short circuit testing platform was built to address this issue, and the changes in Class I short circuits of silicon carbide MOSFETs under different threshold voltage differences were studied. The article provides a detailed analysis of the working principle and short-circuit test results of the testing circuit. The experimental results show that the larger the threshold voltage, the greater the conduction resistance of silicon carbide MOSFETs, resulting in a larger short-circuit current and energy of silicon carbide MOSFETs.
