针对压接型IGBT器件传统多物理场建模忽略子模组间参数分布不均的问题,建立一种考虑子模组压力、电导率随机分布的多物理场耦合模型。首先,基于数理统计法建立压接型IGBT器件子模组压力分布和芯片电导率分布数学模型；其次,建立多芯片器件电-热-机械多物理场耦合模型,并通过单芯片瞬态实验结果验证模型有效性；最后,提出一种基于蒙特卡洛法的芯片压力和电导率随机模拟方法,统计分析在子模组参数不均条件下的电流、温度分布规律。结果表明,单芯片子模组压力、电导率不均将对器件内部电流、温度的分布均匀性造成影响,电热分布不均匀度最大分别增加约390%和19%。

To address the issue of overlooking the non-uniform distribution of parameters among submodules in traditional multiphysics field modeling of PP-IGBT devices, a novel multiphysics field coupling model is proposed, which incorporates the stochastic distribution of pressure and conductivity among submodules. Firstly, a mathematical model for the pressure distribution of submodule groups and the conductivity distribution of chips using mathematical statistics methods tailored to PP-IGBT devices is established. Next, an electrical-thermal-mechanical multiphysical field coupling model for multi-chip PP-IGBT devices is constructed, validated through single-chip transient experiments. Lastly, a stochastic simulation method is introduced, based on the Monte Carlo method to address the variability in pressure and conductivity among chips. Besides, statistical analysis under conditions of uneven parameter distributions among submodule groups is conducted, elucidating the current and temperature distribution laws in such scenarios. Results show that the uneven pressure and conductivity of the single-chip submodule have a great impact on the distribution uniformity of the current and temperature, with a maximum increase in the unevenness of the electro-thermal distribution about 390% and 19%, respectively.