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碳化硅MOSFET动态阈值漂移综述
作者:
作者单位:

重庆大学 输变电装备技术全国重点实验室

中图分类号:

TN386


A Review on Dynamic Threshold Voltage Drift in SiC MOSFETs
Author:
Affiliation:

State Key Laboratory of Power Transmission Equipment Technology,Chongqing University

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  • 参考文献 [44]
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    摘要:

    碳化硅属于宽禁带半导体，其临界击穿电场比硅高出约一个量级。这就使得基于碳化硅制作的MOSFET的电压电流等级，可延伸覆盖硅基IGBT的电压电流等级。用单极型的MOSFET与双极型的IGBT竞争，在开关损耗方面具有降维打击效果。然而，碳化硅MOSFET存在动态阈值漂移问题，该问题正是导致特斯拉电动汽车召回事件的关键因素之一。本文综述了近年来国内外关于碳化硅MOSFET动态阈值漂移的研究进展，分析了碳化硅MOSFET在不同应力下的漂移规律及动态阈值漂移的物理机理，最后提出了相应的解决方法。

    Abstract:

    Silicon carbide (SiC) is a wide bandgap semiconductor with a critical breakdown electric field approximately an order of magnitude higher than that of silicon. This enables SiC-based MOSFETs to extend their voltage and current ratings to cover those of silicon-based IGBTs. Unipolar MOSFETs have a significant advantage over bipolar IGBTs in terms of switching losses. However, the silicon carbide MOSFET has a dynamic threshold drift problem, which is one of the key factors leading to the Tesla electric vehicle recall. This paper reviews recent research on the dynamic threshold voltage drift of SiC MOSFETs from both domestic and international sources. The drift behavior of SiC MOSFETs under different stresses and the physical mechanisms inducing dynamic threshold voltage drift are analyzed, and corresponding solutions are proposed.

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  • 收稿日期:2024-08-16
  • 最后修改日期:2024-10-17
  • 录用日期:2024-10-21
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